Electronic Band Structure and Metallization of Aluminium Nitride (AlN) under High Pressure
نویسندگان
چکیده
منابع مشابه
Band Structure, Metallization and Superconducting Transition of Group III-V Semiconductors AlP and AlAs under High Pressure
The results of a full potential linear muffin-tin orbital (FP-LMTO) study on the electronic properties of cubic zinc blende type group III-V semiconductors AlP and AlAs under pressure are presented. The equilibrium lattice constant, bulk modulus, pressure derivative of bulk modulus and the phase transition pressure at which the compounds undergo structural phase transition from ZnS to NaCl and ...
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Zhao Zhao,1,2,* Shibing Wang,2,3 Artem R. Oganov,4,5,6,* Pengcheng Chen,7,4 Zhenxian Liu,8 and Wendy L. Mao2,3,9 1Department of Physics, Stanford University, Stanford, California 94305, USA 2Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA 3Department of Geological and Environmental Sciences, Stanford University, Stanf...
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The high pressure band structure, density of states, metallization, structural phase transition and superconductivity of cubic zinc blende type zinc selenide (ZnSe) and cadmium selenide (CdSe) are investigated using the full potential linear muffin-tin orbital (FP-LMTO) method. The ground state properties and band gap values are compared with the experimental results. The equilibrium lattice co...
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ژورنال
عنوان ژورنال: International Journal of Scientific Research in Chemical Engineering
سال: 2014
ISSN: 2345-6787
DOI: 10.12983/ijsrce-2014-p0087-0092